The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Feb. 23, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3115 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/015 (2025.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01); H10D 30/024 (2025.01); H10D 84/834 (2025.01);
Abstract
A method includes depositing an interlayer dielectric (ILD) over a source/drain region, implanting impurities into a portion of the ILD, recessing the portion of the ILD to form a trench, forming spacers on sidewalls of the trench, the spacers including a spacer material, forming a source/drain contact in the trench and removing the spacers and the portion of the ILD with an etching process to form an air-gap, the air-gap disposed under and along sidewalls of the source/drain contact, where the etching process selectively etches the spacer material and the impurity.