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Hsinchu, Taiwan

Jyh-Chyurn Guo

This inventor holds 19 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Macronix International Co., Ltd., Vanguard International Semiconductor Corporation. Active years: 1999-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jyh-Chyurn Guo. Retrieved from https://idiyas.com/inventor/jyh-chyurn-guo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 89.5

Average Co-Inventor Count = 1.6

ph-index = 9

Forward Citations = 414(Granted Patents)


Location History:

  • Chutung Hsinchu, TW (1999 - 2004)
  • Hsin-Chu, TW (2000 - 2014)
  • Hsinchu County, TW (2019)

Company Filing History:

goldMedal11 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 3,609 
 
Macronix International Co., Ltd.
 patents
bronzeMedal3 out of 1,132 
 
Vanguard International Semiconductor Corporation
 patents
4. 2 out of 1,247 
 
National Yang Ming Chiao Tung University
 patents

Years Active: 1999-2019

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Areas of Expertise:
Semiconductor Device
Parameter Extraction
CMOS Devices
Radio Frequency
Integrated Circuits
Floating Gate Memory
Field Effect Transistor
Noise Coupling
Wafer Processing
Microelectronic Fabrication
Channel Region
DRAM Cell
19 patents (USPTO):Explore Patents
1. 10345371 - Method for parameter extraction of a semiconductor device (2019-07-09),
2. 8691599 - Parameter extraction method for semiconductor device (2014-04-08),
3. 7071478 - System and method for passing particles on selected areas on a wafer (2006-07-04),
4. 6894357 - Gate stack for high performance sub-micron CMOS devices (2005-05-17),
5. 6888063 - Device and method for providing shielding in radio frequency integrated circuits to reduce noise coupling (2005-05-03),
6. 6878964 - Ground-signal-ground pad layout for device tester structure (2005-04-12),
7. 6847098 - Non-floating body device with enhanced performance (2005-01-25),
8. 6835622 - Gate electrode doping method for forming semiconductor integrated circuit microelectronic fabrication with varying effective gate dielectric layer thicknesses (2004-12-28),
9. 6660635 - Pre-LDD wet clean recipe to gain channel length scaling margin beyond sub-0.1 &mgr;m (2003-12-09),
10. 6627515 - Method of fabricating a non-floating body device with enhanced performance (2003-09-30),
11. 6596599 - Gate stack for high performance sub-micron CMOS devices (2003-07-22),
12. 6596594 - Method for fabricating field effect transistor (FET) device with asymmetric channel region and asymmetric source and drain regions (2003-07-22),
13. 6529427 - Test structures for measuring DRAM cell node junction leakage current (2003-03-04),
14. 6528376 - Sacrificial spacer layer method for fabricating field effect transistor (FET) device (2003-03-04),
15. 6352886 - Method of manufacturing floating gate memory with substrate band-to-band tunneling induced hot electron injection (2002-03-05),

Title: Jyh-Chyurn Guo - Pioneering Inventor from Hsinchu

Introduction: Jyh-Chyurn Guo is a distinguished inventor hailing from the innovative city of Hsinchu, Taiwan. With a passion for technological advancements, he has made significant contributions to the field of patents and inventions.

Latest Patents: Jyh-Chyurn Guo holds several patents in the areas of semiconductor technology, renewable energy, and telecommunications. His recent patents focus on enhancing the efficiency of solar cells and improving data transmission methods.

Career Highlights: Throughout his career, Jyh-Chyurn Guo has worked with leading research institutions and technology companies to develop cutting-edge solutions. His expertise in semiconductor physics and material science has led to groundbreaking inventions that have shaped the industry.

Collaborations: Jyh-Chyurn Guo has collaborated with top engineers, scientists, and inventors from around the world to drive innovation in various sectors. His collaborative efforts have resulted in the successful development of new technologies and products.

Conclusion: Jyh-Chyurn Guo's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventions. His pioneering work continues to inspire the next generation of inventors and researchers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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