The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Nov. 30, 2001
Jyh-Chyurn Guo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
Within a method for fabricating a field effect transistor (FET) device within a microelectronic fabrication there is employed for forming a gate electrode from a blanket gate electrode material layer a self aligned two step pattering method. By employing the self aligned two step patterning method for forming the gate electrode, there may be formed within the field effect transistor (FET) device a source/drain region prior to forming interposed between the source/drain region and the gate electrode an additional ion implant structure while is formed while employing as a mask the gate electrode and a permanent spacer layer formed adjacent the gate electrode. By forming within the field effect transistor (FET) device the source/drain region prior to forming the additional ion implant structure, the additional ion implant structure is formed with enhanced structural stability, and thus the field effect transistor (FET) device is fabricated with enhanced performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile