The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Aug. 12, 1999
Applicant:
Inventor:
Jyh-Chyurn Guo, Hsin-Chu, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract
A method and methodology is provided for measuring ultra-low leakage current in DRAM devices. The invention provides a method and structures that are not limited to a trade-off between the number of contact points that are established to do the measurement and test accuracy, that can distinguish between diffusion junction leakage and leakage induced by contact regions and that can measure leakage current during on/off states of the word-line of a DRAM device.