Non-floating body device with enhanced performance

Abstract

A method of forming a buried silicon oxide region in a semiconductor substrate with portions of the buried silicon oxide region formed underlying portions of a strained silicon shape, and where the strained silicon shape is used to accommodate a semiconductor device, has been developed. A first embodiment of this invention features a buried oxide region formed in a silicon alloy layer, via thermal oxidation procedures. A first portion of the strained silicon layer, protected during the thermal oxidation procedure, overlays the silicon alloy layer while a second portion of the strained silicon layer overlays the buried oxide region. A second embodiment of this invention features an isotropic dry etch procedure used to form an isotropic opening in the silicon alloy layer, with the opening laterally extending under a portion of the strained silicon layer. Subsequent silicon oxide deposition and planarization procedures results in a first portion of the strained silicon layer overlying the silicon alloy layer while a second portion overlays a buried oxide region. A semiconductor device is then formed in the strained silicon layer, with specific elements of the semiconductor device located on a buried oxide region.