The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Nov. 15, 2016
Applicant:
National Chiao Tung University, Hsinchu, TW;
Inventors:
Jyh-Chyurn Guo, Hsinchu County, TW;
Yen-Ying Lin, Tainan, TW;
Assignee:
NATIONAL CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); G06F 17/50 (2006.01); H01L 29/78 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2621 (2013.01); G06F 17/5036 (2013.01); G06F 17/5081 (2013.01); H01L 22/14 (2013.01); H01L 29/7833 (2013.01);
Abstract
A method is provided for parameter extraction of a semiconductor device with a multi-finger gate. The method includes measuring gate-to-source and gate-to-drain capacitances and performing 3D simulation to compute fringing capacitances, thereby computing an overlap capacitance between the gate and a source/drain extension region, and computing a length of the source/drain extension region according to the overlap capacitance.