Jung Han

Title: Innovations of Jung Han in Gallium Nitride Technology

Introduction

Jung Han, an accomplished inventor based in Woodbridge, CT, has made significant contributions to the field of semiconductor technology, particularly in gallium nitride (GaN) devices. With a remarkable portfolio of 18 patents, he has been at the forefront of developing advanced methods and structures for light-emitting devices.

Latest Patents

Jung Han's latest patents showcase his expertise in GaN vertical microcavity surface emitting lasers (VCSELs). One notable patent focuses on the methods and structures for forming vertical-cavity light-emitting devices. This invention describes a technique where an n-side or bottom-side layer can be laterally etched to create a porous semiconductor region, which is then converted into a porous oxide. This porous oxide serves as a current-blocking and guiding layer, effectively directing bias current through the active area of the light-emitting device. Additionally, distributed Bragg reflectors are fabricated on both sides of the active region, resulting in a highly efficient vertical-cavity surface-emitting laser, primarily using III-nitride materials.

Another recent patent outlines the structures and methods for creating highly uniform and high-porosity gallium-nitride layers with sub-100-nm pore sizes. This innovative approach utilizes electrochemical etching of heavily-doped gallium nitride at low bias voltages in concentrated nitric acid to form porous gallium nitride layers. These porous layers are instrumental in reflective structures for integrated optical devices like VCSELs and LEDs.

Career Highlights

Throughout his career, Jung Han has worked with esteemed institutions, including Yale University and Sandia Corporation. His work in these organizations has significantly impacted the research and development of semiconductor technologies.

Collaborations

Jung Han has collaborated with notable coworkers such as Jie Song and Benjamin Leung, contributing to innovative projects in the semiconductor field. Their collective expertise has led to advancements in the technology and applications of gallium nitride devices.

Conclusion

Jung Han's accomplishments in the realm of GaN technology reflect his innovative spirit and dedication to enhancing light-emitting devices. His 18 patents are a testament to his contributions, positioning him as a leading inventor in this highly technical field. Through his work, Jung continues to pave the way for future advancements in semiconductor technologies.