The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Apr. 15, 2015
Yale University, New Haven, CT (US);
Jung Han, Woodbridge, CT (US);
Benjamin Leung, Toronto, CA;
Yale University, New Haven, CT (US);
Abstract
Methods and structures for forming flat, continuous, planar, epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semipolar GaN may be grown from inclined c-plane facets on a patterned sapphire substrate, and coalesced to form a continuous layer of semipolar III-nitride semiconductor over the sapphire substrate. Planarization of the layer is followed by crystal regrowth using a nitrogen carrier gas to produce a flat, microfabrication-grade, process surface of semipolar III-nitride semiconductor across the substrate. Quality multiple quantum wells can be fabricated in the regrown semipolar material.