This inventor holds 2 USPTO granted patents. Top assignee: Yale University. Active years: 2018.
Company Filing History:
Years Active: 2018
Title: The Innovations of Benjamin Leung
Introduction
Benjamin Leung is a prominent inventor based in Toronto, Canada. He has made significant contributions to the field of semiconductor technology, particularly in the development of III-nitride materials. With a total of 2 patents, his work has advanced the understanding and application of semipolar GaN layers.
Latest Patents
Leung's latest patents include innovative methods and structures for forming epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates. One of his notable patents describes the process of growing semi-nitrogen-polar GaN from inclined c-plane facets of sapphire, which coalesces to form a continuous layer of GaN over the sapphire substrate. This method utilizes nitridation of the sapphire and a low-temperature GaN buffer layer to achieve semi-nitrogen-polar GaN. Another patent focuses on obtaining planar semipolar gallium nitride surfaces, detailing methods for forming flat, continuous, planar, epitaxial layers of semipolar III-nitride materials. This process allows for the growth of semipolar GaN from inclined c-plane facets on a patterned sapphire substrate, leading to a microfabrication-grade surface suitable for quality multiple quantum wells.
Career Highlights
Benjamin Leung is affiliated with Yale University, where he continues to push the boundaries of semiconductor research. His work has garnered attention for its potential applications in various electronic and optoelectronic devices.
Collaborations
Leung collaborates with Jung Han, a fellow researcher, to further explore advancements in semiconductor technology.
Conclusion
Benjamin Leung's innovative contributions to the field of III-nitride materials and his patents reflect his dedication to advancing semiconductor technology. His work continues to influence the industry and pave the way for future innovations.