The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Apr. 15, 2015
Applicant:
Yale University, New Haven, CT (US);
Inventors:
Jung Han, Woodbridge, CT (US);
Benjamin Leung, Toronto, CA;
Assignee:
Yale University, New Haven, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); C30B 29/20 (2006.01); C30B 29/40 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 25/186 (2013.01); C30B 29/20 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01);
Abstract
Methods and structures for forming epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semi-nitrogen-polar GaN may be grown from inclined c-plane facets of sapphire and coalesced to form a continuous layer of (2021) GaN over the sapphire substrate. Nitridation of the sapphire and a low-temperature GaN buffer layer is used to form semi-nitrogen-polar GaN.