The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Apr. 15, 2015
Applicant:
Yale University, New Haven, CT (US);
Inventors:
Assignee:
Yale University, New Haven, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01L 21/02 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01L 21/02203 (2013.01); H01S 5/04253 (2019.08); H01S 5/18311 (2013.01); H01S 5/18363 (2013.01); H01S 5/04257 (2019.08); H01S 5/18341 (2013.01);
Abstract
Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.