New Haven, CT, United States of America

Danti Chen

This inventor holds 2 USPTO granted patents. Top assignee: Yale University. Active years: 2017-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Danti Chen. Retrieved from https://idiyas.com/inventor/danti-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2017-2021

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2 patents (USPTO):Explore Patents

Title: Innovations of Danti Chen in Semiconductor Technology

Introduction

Danti Chen is a prominent inventor based in New Haven, CT (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical-cavity surface-emitting lasers and large-area semiconductor layers. With a total of 2 patents, his work has advanced the capabilities of light-emitting devices.

Latest Patents

Danti Chen's latest patents include a method for a GaN vertical microcavity surface-emitting laser (VCSEL). This patent describes methods and structures for forming vertical-cavity light-emitting devices. An n-side or bottom-side layer may be laterally etched to create a porous semiconductor region, which is then converted to a porous oxide. The porous oxide serves as a current-blocking and guiding layer, directing bias current through the active area of the light-emitting device. Additionally, distributed Bragg reflectors can be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be constructed from III-nitride materials.

Another notable patent involves large-area, laterally-grown epitaxial semiconductor layers. This patent outlines structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer. The semiconductor layer is formed through heteroepitaxial growth from a selective growth area within a vertically-confined, lateral-growth guiding structure. These guiding structures can be arranged in arrays over a substrate region, allowing for the coverage of a majority of the substrate with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN can be grown on silicon.

Career Highlights

Danti Chen is affiliated with Yale University, where he continues to push the boundaries of semiconductor research. His innovative work has garnered attention in the scientific community and has implications for various applications in electronics and optoelectronics.

Collaborations

Danti Chen has collaborated with notable colleagues, including Jung Han and Chia-Feng Lin. Their combined expertise has contributed to the advancement of semiconductor technologies and the development of new methodologies in the field.

Conclusion

Danti Chen's contributions to semiconductor technology through his patents and research at Yale University highlight his role as an influential inventor. His work continues to shape the future of light-emitting devices and semiconductor materials

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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