The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Oct. 30, 2015
Applicant:
Yale University, New Haven, CT (US);
Inventors:
Assignee:
Yale University, New Haven, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); C25F 3/12 (2006.01); C30B 29/40 (2006.01); C30B 33/10 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 33/16 (2010.01); C25B 1/00 (2006.01); H01L 21/3063 (2006.01); H01L 33/32 (2010.01); C25B 1/04 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); G02B 5/18 (2006.01); G02B 6/293 (2006.01); H01L 21/326 (2006.01); G02B 1/02 (2006.01); G02B 1/118 (2015.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
C25F 3/12 (2013.01); C25B 1/003 (2013.01); C25B 1/04 (2013.01); C30B 23/025 (2013.01); C30B 25/186 (2013.01); C30B 29/406 (2013.01); C30B 33/10 (2013.01); G02B 1/02 (2013.01); G02B 1/118 (2013.01); G02B 5/1861 (2013.01); G02B 6/29356 (2013.01); G02B 6/29358 (2013.01); H01L 21/02002 (2013.01); H01L 21/02005 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 21/306 (2013.01); H01L 21/30612 (2013.01); H01L 21/30625 (2013.01); H01L 21/30635 (2013.01); H01L 21/326 (2013.01); H01L 21/7813 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); G02B 2207/107 (2013.01); H01L 33/0062 (2013.01); Y02E 60/366 (2013.01); Y10T 428/24997 (2015.04);
Abstract
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.