Company Filing History:
Years Active: 2015-2019
Title: Innovations of Qian Sun in Gallium Nitride Technology
Introduction
Qian Sun is an accomplished inventor based in Woodbridge, CT (US). He has made significant contributions to the field of gallium nitride (GaN) technology, holding 2 patents that focus on innovative methods and applications.
Latest Patents
One of his latest patents is titled "Conductivity based on selective etch for GaN devices and applications thereof." This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm) with controlled pore diameters, pore density, and porosity. The patent also discloses methods for generating novel optoelectronic devices based on porous GaN. Additionally, a layer transfer scheme is introduced to separate and create free-standing crystalline GaN thin layers, enabling a new device manufacturing paradigm involving substrate recycling. Other embodiments of this invention relate to the fabrication of GaN-based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
Career Highlights
Qian Sun is affiliated with Yale University, where he continues to advance research in the field of materials science and engineering. His work has garnered attention for its potential applications in various high-tech industries.
Collaborations
He collaborates with notable colleagues, including Yu Zhang and Jung Han, who contribute to his research endeavors.
Conclusion
Qian Sun's innovative work in gallium nitride technology showcases his commitment to advancing the field through his patents and collaborations. His contributions are paving the way for new applications and technologies in the industry.