The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Feb. 19, 2013
Applicant:
Yale University, New Haven, CT (US);
Inventor:
Jung Han, Woodbridge, CT (US);
Assignee:
Yale University, New Haven, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/04 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); C30B 25/16 (2006.01); C30B 29/40 (2006.01); C30B 25/22 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C30B 25/16 (2013.01); C30B 25/22 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02623 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01);
Abstract
Methods are provided for generating a crystalline material. The methods comprise depositing a textured thin film in a growth seed area, wherein the textured thin film has a preferential crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing a crystalline material in the growth channel along a direction that is substantially perpendicular to the preferential crystallographic axis of the textured thin film. A preferred crystalline material is gallium nitride, and preferred textured thin films are aluminum nitride and titanium nitride.