The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Jun. 20, 2013
Applicant:
Yale University, New Haven, CT (US);
Inventor:
Jung Han, Woodbridge, CT (US);
Assignee:
Yale University, New Haven, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/306 (2006.01); H01S 5/343 (2006.01); H01L 21/3063 (2006.01); H01S 5/183 (2006.01); B82Y 20/00 (2011.01); H01L 33/00 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 21/30612 (2013.01); B82Y 20/00 (2013.01); H01L 21/306 (2013.01); H01L 21/30635 (2013.01); H01S 5/18341 (2013.01); H01S 5/18363 (2013.01); H01S 5/18369 (2013.01); H01S 5/343 (2013.01); H01L 33/0075 (2013.01); H01L 33/105 (2013.01); H01L 2924/0002 (2013.01); H01S 5/34333 (2013.01);
Abstract
Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.