The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Sep. 30, 2015
Applicant:
Yale University, New Haven, CT (US);
Inventors:
Jung Han, Woodbridge, CT (US);
Cheng Zhang, New Haven, CT (US);
Assignee:
Yale University, New Haven, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/343 (2006.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01L 33/10 (2010.01); H01S 5/183 (2006.01); H01L 21/3063 (2006.01); H01S 5/10 (2021.01); H01S 5/187 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01L 21/30635 (2013.01); H01L 33/10 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01S 5/1042 (2013.01); H01S 5/183 (2013.01); H01S 5/187 (2013.01); H01S 5/18308 (2013.01); H01S 5/18361 (2013.01); H01S 5/18369 (2013.01); H01S 5/305 (2013.01);
Abstract
Structures and methods for forming highly uniform and high-porosity gallium-nitride layers with sub-100-nm pore sizes are described. Electrochemical etching of heavily-doped gallium nitride at low bias voltages in concentrated nitric acid is used to form the porous gallium nitride. The porous layers may be used in reflective structures for integrated optical devices such as VCSELs and LEDs.