The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Nov. 30, 2015
Applicant:
Yale University, New Haven, CT (US);
Inventors:
Jung Han, Woodbridge, CT (US);
Yufeng Li, Shaanxi, CN;
Cheng Zhang, New Haven, CT (US);
Sung Hyun Park, New Haven, CT (US);
Assignee:
Yale University, New Haven, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 31/0304 (2006.01); H01L 21/324 (2006.01); H01L 33/40 (2010.01); H01L 21/306 (2006.01); H01L 33/16 (2010.01); H01L 31/0352 (2006.01); H01L 31/036 (2006.01); H01L 31/0725 (2012.01); H01L 31/0735 (2012.01); H01L 33/32 (2010.01); H01L 29/207 (2006.01); H01L 29/15 (2006.01); H01L 29/88 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/306 (2013.01); H01L 21/3245 (2013.01); H01L 31/036 (2013.01); H01L 31/03044 (2013.01); H01L 31/035236 (2013.01); H01L 31/0725 (2013.01); H01L 31/0735 (2013.01); H01L 33/16 (2013.01); H01L 33/40 (2013.01); H01L 29/15 (2013.01); H01L 29/207 (2013.01); H01L 29/88 (2013.01); H01L 33/32 (2013.01); H01L 2933/0016 (2013.01);
Abstract
A conductive, porous gallium-nitride layer can be formed as an active layer in a multilayer structure adjacent to one or more p-type III-nitride layers, which may be buried in a multilayer stack of an integrated device. During an annealing process, dopant-bound atomic species in the p-type layers that might otherwise neutralize the dopants may dissociate and out-diffuse from the device through the porous layer. The release and removal of the neutralizing species may reduce layer resistance and improve device performance.