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For the Inventor, By the Inventor

Hsinchu, Taiwan

Jhy-Jyi Sze

This inventor holds 132 USPTO granted patents and 17 published patent applications, primarily in Image Sensors (CPC class H01L27-1463). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., United Microelectronics Corp., United Semiconductor Corp.. Active years: 1999-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jhy-Jyi Sze. Retrieved from https://idiyas.com/inventor/jhy-jyi-sze

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 132 

% Patents Active = 93.9

Average Co-Inventor Count = 3.0

ph-index = 8

Forward Citations = 270(Granted Patents)

Forward Citations (Not Self Cited) = 221(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Tainan, TW (1999 - 2012)
  • Hsinchu, TW (2010 - 2024)

Company Filing History:

goldMedal108 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal18 out of 7,285 
 
United Microelectronics Corp.
 patents
bronzeMedal5 out of 130 
 
United Semiconductor Corp.
 patents
4. 2 out of 52 
 
Altasens, Inc.
 patents
5. 1 out of 4 
 
United Semiconductor Circuit Corp.
 patents
where one patent can have more than one assignee

Years Active: 1999-2026

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Areas of Expertise:
Image Sensor
Dark Current Reduction
High Performance
Germanium-Based
Photodetector
Vertical Gate FET
MIM Device
Stacked Substrates
Deep Trench Isolation
Composite BSI Structure
Low-Noise
Semiconductor Devices
132 patents (USPTO):Explore Patents
1. 12660358 - Image sensor including silicon vertically stacked with germanium layer (2026-06-16),
2. 12615857 - Semiconductor imaging device having improved dark current performance (2026-04-28),
3. 12557403 - High density image sensor (2026-02-17),
4. 12495632 - Semiconductor image sensor and method for forming the same (2025-12-09),
5. 12464839 - Vertical gate field effect transistor (2025-11-04),
6. 12439706 - Device over photodetector pixel sensor (2025-10-07),
7. 12438042 - High capacitance MIM device with self aligned spacer (2025-10-07),
8. 12414400 - High performance image sensor (2025-09-09),
9. 12396289 - Germanium-containing photodetector and methods of forming the same (2025-08-19),
10. 12369422 - Pixel device on deep trench isolation (DTI) structure for image sensor (2025-07-22),
11. 12218171 - Low-noise image sensor having stacked semiconductor substrates (2025-02-04),
12. 12211876 - Extra doped region for back-side deep trench isolation (2025-01-28),
13. 12166054 - Image sensor with passivation layer for dark current reduction (2024-12-10),
14. 12148853 - Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof (2024-11-19),
15. 12148782 - Composite BSI structure and method of manufacturing the same (2024-11-19),

Title: Innovator Spotlight: Jhy-Jyi Sze - Pioneering Inventor in the Tech Industry

Introduction:

Jhy-Jyi Sze, a distinguished inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology with an impressive portfolio of 111 patents. His innovative work has revolutionized the semiconductor industry, particularly in the realm of cutting-edge device design and image sensor technologies.

Latest Patents:

Among his latest patents is the groundbreaking "Vertical gate field effect transistor", a device that features a sophisticated gate electrode structure designed to enhance semiconductor substrate performance. Additionally, Sze's "Image sensor and manufacturing method thereof" patent showcases his expertise in developing semiconductor structures optimized for capturing radiation within specific wavelength ranges, thereby improving image sensor functionality.

Career Highlights:

Throughout his career, Jhy-Jyi Sze has left an indelible mark on the industry through his impactful roles at renowned companies such as Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) and United Microelectronics Corporation (UMC). His innovative spirit and technical prowess have propelled him to the forefront of technological advancements in Taiwan's vibrant tech sector.

Collaborations:

Sze's collaborative efforts with industry peers, including luminaries such as Dun-Nian Yaung and Shyh-Fann Ting, have further amplified the impact of his inventions and solidified his position as a respected figure in the technological landscape. These partnerships have not only fostered innovation but also led to the development of cutting-edge solutions that push the boundaries of what is achievable in the semiconductor industry.

Conclusion:

In conclusion, Jhy-Jyi Sze stands as a paragon of innovation and ingenuity in the realm of technology, with a remarkable track record of patents and groundbreaking inventions that have shaped the modern tech landscape. His relentless pursuit of excellence and collaborative spirit continue to inspire future generations of inventors and technologists to push the boundaries of what is possible in the ever-evolving field of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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