The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Jhy-Jyi Sze, Hsin-Chu, TW;

Yi-Shin Chu, Hsinchu, TW;

Yin-Kai Liao, Taipei, TW;

Hsiang-Lin Chen, Hsinchu, TW;

Sin-Yi Jiang, Hsinchu, TW;

Kuan-Chieh Huang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/10 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/809 (2025.01); H10F 39/018 (2025.01); H10F 39/811 (2025.01);
Abstract

A semiconductor image sensor includes a first substrate including a first front side and a first back side, a second substrate including a second front side and a second back side, a third substrate including a third front side and a third back side, a first interconnect structure, and a second interconnect structure. The first substrate includes a layer and a first light-sensing element in the layer. The layer includes a first semiconductor material, and the first light-sensing element includes a second semiconductor material. The second substrate is bonded to the first substrate with the second front side facing the first back side. The third substrate is bonded to the first substrate with the third front side facing the first front side. The first interconnect structure and the second interconnect structure are disposed between the first front side and the third front side.


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