The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jun. 12, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/036 (2006.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10F 77/16 (2025.01);
U.S. Cl.
CPC ...
H10F 39/811 (2025.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/8027 (2025.01); H10F 77/16 (2025.01);
Abstract
The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a masking layer on a first side of a substrate. A first etching process is performed on the first side of the substrate with the masking layer in place. The masking layer is removed. A second wet etching process is performed on the first side of the substrate after removing the masking layer. The first etching process and the second wet etching process collectively form a plurality of topographical features respectively having a triangular shape in a cross-section.