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Hsinchu, Taiwan

United Semiconductor Corp.

USPTO Granted Patents = 130

Forward Citations = 1,228

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84 inventors (with patents filed for the assignee):

Gary Y Hong (38 out of 222 patents)

Yau-Kae Sheu (11 out of 17 patents)

Shu-Ya Chuang (10 out of 18 patents)

4. Claymens Lee (6 out of 15 patents)

5. Jing-Horng Gau (6 out of 30 patents)

6. Chia-Chieh Yu (6 out of 11 patents)

7. Joe Ko (6 out of 41 patents)

8. Yen-Lin Ding (6 out of 9 patents)

9. Hsiu-Wen Huang (6 out of 11 patents)

10. Tsung-Yuan Hung (6 out of 9 patents)

11. Jhy-Jyi Sze (5 out of 129 patents)

12. Chih-Hung Lin (5 out of 28 patents)

13. Anchor Chen (5 out of 36 patents)

14. Chih-Hsiang Hsiao (4 out of 32 patents)

15. Wenchi Ting (4 out of 6 patents)

Core Competencies:

Fluorosilicate Glass

Flash Memory

Dynamic Random Access Memory

Capacitor Fabrication

Transistor Manufacturing

Shallow Trench Isolation

Chemical-Mechanical Polishing

Self-Aligned Silicide

Hemispherical Grained Silicon

Metal-Oxide Semiconductor

Interconnect Fabrication

Three-Dimensional Flash Memory

130 patents: Sort by Forward Citations

1. 6284677 - Method of forming fluorosilicate glass (FSG) layers with moisture-resistant capability (2001-09-04),

2. 6207504 - Method of fabricating flash erasable programmable read only memory (2001-03-27),

3. 6204121 - Method for bottom electrode of capacitor (2001-03-20),

4. 6204108 - Method of fabricating a dynamic random access memory capacitor (2001-03-20),

5. 6197680 - Method for forming conductive line (2001-03-06),

6. 6197678 - Damascene process (2001-03-06),

7. 6194298 - Method of fabricating semiconductor device (2001-02-27),

8. 6194271 - Method for fabricating flash memory (2001-02-27),

9. 6191004 - Method of fabricating shallow trench isolation using high density plasma CVD (2001-02-20),

10. 6190999 - Method for fabricating a shallow trench isolation structure (2001-02-20),

11. 6190958 - Fully self-aligned method for fabricating transistor and memory (2001-02-20),

12. 6187630 - Method for forming hemispherical silicon grains on designated areas of silicon layer (2001-02-13),

13. 6187629 - Method of fabricating a DRAM capacitor (2001-02-13),

14. 6184115 - Method of fabricating self-aligned silicide (2001-02-06),

15. 6183819 - Method for processing a poly defect (2001-02-06),

United Semiconductor Corp. (USC) is a leading semiconductor company that specializes in the design, development, and manufacturing of integrated circuits. With a focus on providing high-quality and innovative solutions, USC works across various industries including consumer electronics, automotive, industrial, and more. The company is committed to delivering superior products and services to meet the evolving needs of its customers worldwide.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

130 Patents

#33 in Hsinchu

#177 in Taiwan

#5,987 in the World

Hsinchu, Taiwan

United Semiconductor Corp.

Forward Citations = 1,228

84 inventors:

Gary Y Hong (38 out of 222 patents)

Yau-Kae Sheu (11 out of 17 patents)

Shu-Ya Chuang (10 out of 18 patents)

4. Claymens Lee (6 out of 15 patents)

5. Jing-Horng Gau (6 out of 30 patents)

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