logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

United Semiconductor Corp.

Calculating rank
USPTO Granted Patents = 130

Forward Citations = 1,234

Loading Chart...
Loading Chart...

84 inventors (with patents filed for the assignee):

goldMedal Gary Y Hong (38 out of 222 patents)

silverMedal Yau-Kae Sheu (11 out of 17 patents)

bronzeMedal Shu-Ya Chuang (10 out of 18 patents)

4.  Claymens Lee (6 out of 15 patents)

5.  Jing-Horng Gau (6 out of 30 patents)

6.  Chia-Chieh Yu (6 out of 11 patents)

7.  Joe Ko (6 out of 41 patents)

8.  Yen-Lin Ding (6 out of 9 patents)

9.  Hsiu-Wen Huang (6 out of 11 patents)

10.  Tsung-Yuan Hung (6 out of 9 patents)

11.  Jhy-Jyi Sze (5 out of 132 patents)

12.  Chih-Hung Lin (5 out of 28 patents)

13.  Anchor Chen (5 out of 36 patents)

14.  Chih-Hsiang Hsiao (4 out of 38 patents)

15.  Wenchi Ting (4 out of 6 patents)


Core Competencies:
Flurosilicate Glass
Flash Memory
Dynamic Random Access Memory
Shallow Trench Isolation
Transistor Fabrication
Capacitor Manufacturing
Damascene Process
High Voltage Devices
Silicon Grains
Self-Aligned Silicide
Metal-Oxide Semiconductor
Interconnect Fabrication

130 patents:

1. 6284677 - Method of forming fluorosilicate glass (FSG) layers with moisture-resistant capability (2001-09-04),
2. 6207504 - Method of fabricating flash erasable programmable read only memory (2001-03-27),
3. 6204121 - Method for bottom electrode of capacitor (2001-03-20),
4. 6204108 - Method of fabricating a dynamic random access memory capacitor (2001-03-20),
5. 6197680 - Method for forming conductive line (2001-03-06),
6. 6197678 - Damascene process (2001-03-06),
7. 6194298 - Method of fabricating semiconductor device (2001-02-27),
8. 6194271 - Method for fabricating flash memory (2001-02-27),
9. 6191004 - Method of fabricating shallow trench isolation using high density plasma CVD (2001-02-20),
10. 6190999 - Method for fabricating a shallow trench isolation structure (2001-02-20),
11. 6190958 - Fully self-aligned method for fabricating transistor and memory (2001-02-20),
12. 6187630 - Method for forming hemispherical silicon grains on designated areas of silicon layer (2001-02-13),
13. 6187629 - Method of fabricating a DRAM capacitor (2001-02-13),
14. 6184115 - Method of fabricating self-aligned silicide (2001-02-06),
15. 6183819 - Method for processing a poly defect (2001-02-06),
Company Overview
United Semiconductor Corp., headquartered in Hsinchu, Taiwan, specializes in the fabrication of flash memory and dynamic random access memory technologies. The company focuses on advanced manufacturing processes, including the development of fluorosilicate glass, shallow trench isolation, and various transistor and capacitor fabrication techniques. United Semiconductor is committed to innovation in high voltage devices and the damascene process, positioning itself as a key player in the semiconductor industry, particularly in memory solutions.
Profile summary synthesized from public USPTO records and patent filings.

logo

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

130 Patents

#55 in Hsinchu

#186 in Taiwan

#6,184 in the World

Hsinchu, TW
Hsinchu, Taiwan

United Semiconductor Corp.

Forward Citations = 1,234

84 inventors:

goldMedal Gary Y Hong (38 out of 222 patents)

silverMedal Yau-Kae Sheu (11 out of 17 patents)

bronzeMedal Shu-Ya Chuang (10 out of 18 patents)

4.  Claymens Lee (6 out of 15 patents)

5.  Jing-Horng Gau (6 out of 30 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: United Semiconductor Corp.. Retrieved from https://idiyas.com/company/united-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…