The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Dec. 17, 1998
Applicant:
Inventors:
Jing-Horng Gau, Nan-Tou Hsien, TW;
Hsiu-Wen Huang, Kaohsiung, TW;
Assignee:
United Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ;
U.S. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ;
Abstract
A method of fabricating a capacitor. A crown-shape bottom storage node is formed on a conductive region. The crown-shape bottom storage node has a wavelike interior surface and a hemi-spherical grained exterior surface. A dielectric layer is formed on the bottom storage node, and a top electrode is formed to cover the dielectric layer.