The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Feb. 16, 1999
Applicant:
Inventor:
Chih-Hsiang Hsiao, Taipei, TW;
Assignee:
United Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1762 ;
U.S. Cl.
CPC ...
H01L 2/1762 ;
Abstract
A method of fabricating a shallow trench isolation includes formation of a trench in a substrate. A high-density plasma chemical vapor deposition is performed with a plasma which does not contain argon gas. A liner oxide layer is formed on the substrate exposed in the trench. Another high-density plasma chemical vapor deposition is performed. A silicon oxide layer is formed. Then, some follow-up steps are performed to complete the shallow trench isolation.