The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Feb. 01, 1999
Chia-Chieh Yu, Taipei Hsien, TW;
United Semiconductor Corp., Hsinchu, TW;
Abstract
A damascene process, applicable to a semiconductor substrate, with a patterned first mask layer formed thereon. A part of the substrate not covered by the first mask layer is exposed, while a first dielectric layer is formed on the exposed part of the substrate. The first mask is then removed to form a first opening in the first dielectric layer. A conformal barrier layer is formed on the substrate and the first dielectric layer, followed by filling the first opening with a metal plug. Alternatively, a dual damascene process is disclosed where a second patterned mask layer is formed in first opening and covers a part of the first dielectric layer, while a part of the first dielectric layer is exposed. A second dielectric layer is formed on the exposed part of the first dielectric layer. The second patterned mask layer is removed to form a second opening and to expose the first opening. Consequently, the conformal barrier layer is formed on the substrate and the dielectric layers, before filling the openings with the metal plug.