The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Feb. 01, 1999
Applicant:
Inventors:
Chen-Chih Tsai, Hsinchu, TW;
Yung-Hui Feng, Hsinchu, TW;
Assignee:
United Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/640 ; H05H 1/24 ;
U.S. Cl.
CPC ...
C23C 1/640 ; H05H 1/24 ;
Abstract
A method for processing a poly defect is described. A substrate is provided, and a first oxide layer is formed on the substrate. A polysilicon layer is formed on the first oxide layer, and a poly defect is formed on the polysilicon layer surface simultaneous with polysilicon layer formation. A second oxide layer is formed conformal to the substrate, a portion of the second oxide layer and the poly defect are removed by polishing until a thin second oxide layer and a thin poly defect layer are formed. Finally, the thin second oxide layer is removed.