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For the Inventor, By the Inventor

Gang Chen

San Jose, CA, United States of America

Gang Chen

LinkedIn
USPTO Granted Patents = 136 

 

Average Co-Inventor Count = 3.4

ph-index = 11

Forward Citations = 440(Granted Patents)

Forward Citations (Not Self Cited) = 421(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal127 out of 1,355 
 
Omnivision Technologies, Inc.
 patents
silverMedal4 out of 4 
 
Magvision Semiconductor (beijing) Inc.
 patents
bronzeMedal3 out of 1,635 
 
Meta Platforms Technologies, LLC
 patents
4. 1 out of 562 
 
A9.com, Inc.
 patents
5. 1 out of 20 
 
Silead Inc.
 patents

Years Active: 2013-2025

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Areas of Expertise:
Image Sensor
Deep Trench Isolation
Backside Illuminated
Pixel Array Substrate
High Dynamic Range
Anti-Blooming Structure
Dual Conversion Gain
Foveation Control
Infrared Sensing
Pyramid-Shaped Transistors
Vertical Transfer Gate
Self-Compensation Transistor
136 patents (USPTO):Explore Patents
1. 12477846 - Pixel with vertical transfer structure for dark current improvement, an image sensor thereof and a fabrication method thereof (2025-11-18),
2. 12464837 - High dynamic range, backside-illuminated, low crosstalk image sensor with walls on backside surface to isolate photodiodes (2025-11-04),
3. 12317625 - Image sensor pixel with deep trench isolation structure (2025-05-27),
4. 12294011 - Image sensor pixel with deep trench isolation structure (2025-05-06),
5. 12284839 - Dual depth junction structures and process methods (2025-04-21),
6. 12262563 - Pixel cell having anti-blooming structure and image sensor (2025-03-25),
7. 12205970 - Image sensor pixel with deep trench isolation structure (2025-01-21),
8. 12154919 - Uniform threshold voltage non-planar transistors (2024-11-26),
9. 12119364 - Deep trench isolation structure for image sensor (2024-10-15),
10. 12087222 - Subpixels with reduced dimensions by using shared switching transistors (2024-09-10),
11. 12062670 - Pixel layout with photodiode region partially surrounding circuitry (2024-08-13),
12. 12057067 - Self-compensation of driving transistor threshold voltage using body effect (2024-08-06),
13. 11948965 - Uneven-trench pixel cell and fabrication method (2024-04-02),
14. 11862678 - Electrical isolation in pixel-array substrates using combination of doped semiconductor guard rings and overlapping isolation trenches (2024-01-02),
15. 11860383 - Flare-suppressing image sensor (2024-01-02),

Title: The Innovative Journey of Gang Chen

Introduction: Gang Chen, a pioneering inventor based in San Jose, CA, has made significant contributions to the field of technology and innovation.

Latest Patents: Gang Chen holds several patents in the areas of renewable energy, semiconductor technology, and artificial intelligence, showcasing his diverse expertise and forward-thinking approach to invention.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Gang Chen has led groundbreaking projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Gang Chen has collaborated with top research institutions, leading companies, and brilliant minds in the field, fostering a culture of innovation and knowledge-sharing.

Conclusion: Gang Chen's relentless pursuit of innovation and his commitment to creating a better future through his inventions make him a true visionary in the world of technology.

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