The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jan. 10, 2022
Omnivision Technologies, Inc., Santa Clara, CA (US);
OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);
Abstract
Transistors include trenches formed in the semiconductor substrate having a first conductive type. The trenches define, in a channel width plane of the transistor, at least one nonplanar substrate structure having a plurality of sidewall portions and a tip portion disposed between the plurality of sidewall portions. An epitaxial overlayer is epitaxially grown on the sidewall portions and the tip portion. A channel doping layer having a doped portion of the semiconductor substrate is formed in the nonplanar substrate structure and enclosed by the epitaxial overlayer. An isolation layer is disposed in the trenches and over the epitaxial overlayer. A gate is disposed on the isolation layer and extends into the trenches.