The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Apr. 28, 2021
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Hui Zang, San Jose, CA (US);

Yuanliang Liu, San Jose, CA (US);

Keiji Mabuchi, Los Altos, CA (US);

Gang Chen, San Jose, CA (US);

Bill Phan, San Jose, CA (US);

Duli Mao, Sunnyvale, CA (US);

Takeshi Takeda, Yokohama, JP;

Assignee:

OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/1463 (2013.01);
Abstract

An image sensor comprises a first photodiode region and circuitry. The first photodiode region is disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate to form a first pixel. The first photodiode region includes a first segment coupled to a second segment. The circuitry includes at least a first electrode associated with a first transistor. The first electrode is disposed, at least in part, between the first segment and the second segment of the first photodiode region such that the circuity is at least partially surrounded by the first photodiode region when viewed from the first side of the semiconductor substrate.


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