The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Oct. 21, 2021
Magvision Semiconductor (Beijing) Inc., Beijing, CN;
Gang Chen, San Jose, CA (US);
MAGVISION SEMICONDUCTOR (BEIJING) INC., Beijing, CN;
Abstract
An image sensor device is disclosed. The image sensor device includes a number of pixels and neighboring pixels are isolated by deep trench isolation structures. In an embodiment, a method of forming a deep trench isolation structure includes performing a first etching process to remove a portion of a substrate, thereby forming a first trench in the substrate, performing a first doping process to form a first sidewall doped region along a sidewall surface of the first trench, after the performing of the first plasma doping process, performing a second etching process to extend the first trench, thereby forming a second trench in the substrate, and, after the performing of the second etching process, performing a second doping process to form a second sidewall doped region along a sidewall surface of the second trench, a portion of the second sidewall doped region overlaps with the first sidewall doped region.