The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Aug. 27, 2021
Applicant:

Magvision Semiconductor (Beijing) Inc., Beijing, CN;

Inventors:

Gang Chen, San Jose, CA (US);

Yi Zhang, Shanghai, CN;

Fengyun Yan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2005.12);
U.S. Cl.
CPC ...
H01L 27/1463 (2012.12); H01L 27/14603 (2012.12); H01L 27/14614 (2012.12); H01L 27/1464 (2012.12); H01L 27/14641 (2012.12); H01L 27/14636 (2012.12);
Abstract

An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. The image sensor device also includes a first photodiode in a first pixel region, a source follower transistor coupled to the first photodiode, and a select transistor coupled to the source follower transistor. One of the source follower transistor and the select transistor is in a second pixel region that is different from the first pixel region. While the source follower and the select transistor can be allocated to different cells, either the source follower or the select transistor or both can be further allocated or split into different cells.


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