Fengyun Yan

Title: Innovations of Fengyun Yan in Image Sensor Technology

Introduction

Fengyun Yan is a notable inventor based in Beijing, China. He has made significant contributions to the field of image sensor technology. His innovative work has led to the development of a unique image sensor device that enhances the performance and efficiency of imaging systems.

Latest Patents

Fengyun Yan holds a patent for an image sensor pixel with a deep trench isolation structure. This patent describes an image sensor device that includes a substrate with multiple pixel regions. The device features a first photodiode located in a first pixel region, a source follower transistor connected to the first photodiode, and a select transistor linked to the source follower transistor. Notably, one of these transistors is situated in a second pixel region, distinct from the first. This design allows for flexibility in the allocation of the source follower and select transistors, which can be split into different cells, enhancing the overall functionality of the image sensor.

Career Highlights

Fengyun Yan is currently employed at Magvision Semiconductor (Beijing) Inc. His work at this company has been pivotal in advancing image sensor technology. He has demonstrated a strong commitment to innovation and excellence in his field.

Collaborations

Fengyun has collaborated with talented individuals such as Gang Chen and Yi Zhang. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Fengyun Yan's contributions to image sensor technology exemplify the spirit of innovation. His patent for an image sensor device showcases his expertise and commitment to advancing the field. Through his work, he continues to influence the future of imaging technology.