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Jenn Ming Huang

This inventor holds 51 USPTO granted patents, primarily in Embedded DRAM Technology (CPC class 4382). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Other. Active years: 1996-2004.

USPTO Granted Patents = 51

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 21

Forward Citations = 1,006(Granted Patents)

Forward Citations (Not Self Cited) = 992(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Chin-chu, TW (1999)
Taiwan, TW (1999)
Hsin-Chu, TW (1996 - 2004)

Company Filing History:

50 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 834,411

Other

patents

Years Active: 1996-2004

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Areas of Expertise:

Embedded DRAM

Capacitor Design

Salicide Process

Memory Integration

Dynamic Random Access Memory

Field Effect Transistor

Silicon Oxide Isolation

Parasitic Capacitance

Metal Gate

Contact Process

Dual Gate Dielectric

Junction Breakdown

51 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6818495 - Method for forming high purity silicon oxide field oxide isolation region (2004-11-16),

2. 6617631 - Method for making closely spaced capacitors with reduced parasitic capacitance on a dynamic random access memory (DRAM) device (2003-09-09),

3. 6600228 - Keyhole at the top metal level prefilled with photoresist to prevent passivation damage even for a severe top metal rule (2003-07-29),

4. 6579784 - Method for forming a metal gate integrated with a source and drain salicide process with oxynitride spacers (2003-06-17),

5. 6436763 - Process for making embedded DRAM circuits having capacitor under bit-line (CUB) (2002-08-20),

6. 6406987 - Method for making borderless contacts to active device regions and overlaying shallow trench isolation regions (2002-06-18),

7. 6353269 - Method for making cost-effective embedded DRAM structures compatible with logic circuit processing (2002-03-05),

8. 6294456 - Method of prefilling of keyhole at the top metal level with photoresist to prevent passivation damage even for a severe top metal rule (2001-09-25),

9. 6274471 - Method for making high-aspect-ratio contacts on integrated circuits using a borderless pre-opened hard-mask technique (2001-08-14),

10. 6265120 - Geometry design of active region to improve junction breakdown and field isolation in STI process (2001-07-24),

11. 6255160 - Cell design and process for making dynamic random access memory (DRAM) having one or more Gigabits of memory cells (2001-07-03),

12. 6251726 - Method for making an enlarged DRAM capacitor using an additional polysilicon plug as a center pillar (2001-06-26),

13. 6235593 - Self aligned contact using spacers on the ILD layer sidewalls (2001-05-22),

14. 6228699 - Cross leakage of capacitors in DRAM or embedded DRAM (2001-05-08),

15. 6221713 - Approach for self-aligned contact and pedestal (2001-04-24),

Title: Inventor Jenn Ming Huang - Revolutionizing Technology in Hsin-Chu

Introduction: Jenn Ming Huang is a pioneering inventor based in Hsin-Chu, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Huang's latest patents focus on advancements in semiconductor technology, artificial intelligence, and renewable energy solutions, showcasing her commitment to innovation and sustainability.

Career Highlights: With a career spanning over two decades, Jenn Ming Huang has held key roles in leading tech companies, driving research and development efforts that have led to numerous breakthrough inventions.

Collaborations: Huang has collaborated with top research institutions and universities worldwide, fostering a culture of innovation and knowledge-sharing that has resulted in cutting-edge technological developments.

Conclusion: Jenn Ming Huang's passion for pushing the boundaries of technology and her dedication to creating a more sustainable future through innovation make her a true trailblazer in the world of inventions.

Profile summary based on public USPTO records.

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