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Hsin-Chu, Taiwan

Jenn Ming Huang

USPTO Granted Patents = 51

Average Co-Inventor Count = 1.3

ph-index = 21

Forward Citations = 1,002(Granted Patents)

Forward Citations (Not Self Cited) = 992(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Chin-chu, TW (1999)
Taiwan, TW (1999)
Hsin-Chu, TW (1996 - 2004)

Company Filing History:

50 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

1 out of 832,843

Other

patents

Years Active: 1996-2004

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Areas of Expertise:

Silicon Oxide

Dynamic Random Access Memory

Embedded DRAM

Capacitor Design

Self-Aligned Contact

Salicide Process

CMOS Devices

Field Effect Transistor

Borderless Contacts

Dual Damascene Process

Memory Circuits

Polysilicon Resistor

51 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6818495 - Method for forming high purity silicon oxide field oxide isolation region (2004-11-16),

2. 6617631 - Method for making closely spaced capacitors with reduced parasitic capacitance on a dynamic random access memory (DRAM) device (2003-09-09),

3. 6600228 - Keyhole at the top metal level prefilled with photoresist to prevent passivation damage even for a severe top metal rule (2003-07-29),

4. 6579784 - Method for forming a metal gate integrated with a source and drain salicide process with oxynitride spacers (2003-06-17),

5. 6436763 - Process for making embedded DRAM circuits having capacitor under bit-line (CUB) (2002-08-20),

6. 6406987 - Method for making borderless contacts to active device regions and overlaying shallow trench isolation regions (2002-06-18),

7. 6353269 - Method for making cost-effective embedded DRAM structures compatible with logic circuit processing (2002-03-05),

8. 6294456 - Method of prefilling of keyhole at the top metal level with photoresist to prevent passivation damage even for a severe top metal rule (2001-09-25),

9. 6274471 - Method for making high-aspect-ratio contacts on integrated circuits using a borderless pre-opened hard-mask technique (2001-08-14),

10. 6265120 - Geometry design of active region to improve junction breakdown and field isolation in STI process (2001-07-24),

11. 6255160 - Cell design and process for making dynamic random access memory (DRAM) having one or more Gigabits of memory cells (2001-07-03),

12. 6251726 - Method for making an enlarged DRAM capacitor using an additional polysilicon plug as a center pillar (2001-06-26),

13. 6235593 - Self aligned contact using spacers on the ILD layer sidewalls (2001-05-22),

14. 6228699 - Cross leakage of capacitors in DRAM or embedded DRAM (2001-05-08),

15. 6221713 - Approach for self-aligned contact and pedestal (2001-04-24),

Title: Inventor Jenn Ming Huang - Revolutionizing Technology in Hsin-Chu

Introduction: Jenn Ming Huang is a pioneering inventor based in Hsin-Chu, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Huang's latest patents focus on advancements in semiconductor technology, artificial intelligence, and renewable energy solutions, showcasing her commitment to innovation and sustainability.

Career Highlights: With a career spanning over two decades, Jenn Ming Huang has held key roles in leading tech companies, driving research and development efforts that have led to numerous breakthrough inventions.

Collaborations: Huang has collaborated with top research institutions and universities worldwide, fostering a culture of innovation and knowledge-sharing that has resulted in cutting-edge technological developments.

Conclusion: Jenn Ming Huang's passion for pushing the boundaries of technology and her dedication to creating a more sustainable future through innovation make her a true trailblazer in the world of inventions.

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