The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Mar. 05, 1999
Applicant:
Inventor:
Jenn Ming Huang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A method for forming bit-line and charge-node contact holes that eliminates effects of misalignment when contact etching these holes. A liner is deposited that arrests the etch from burning through the deposited polysilicon and damage the word-line and passgate transistor of a DRAM structure should misalignment occur in the formation of these structures and their surrounding contact plugs. This liner at the same time relaxes restrictions of tolerance for the process of the creation of such holes.