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For the Inventor, By the Inventor

Middlesex, VT, United States of America

Jeffrey Scott Brown

USPTO Granted Patents = 62



Average Co-Inventor Count = 4.2

ph-index = 21

Forward Citations = 1,044(Granted Patents)

Forward Citations (Not Self Cited) = 1,038(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Jeffersonville, VT (US) (1998 - 2001)
  • Middlesex, VT (US) (1999 - 2011)
  • Berlin, VT (US) (2015)

Company Filing History:

goldMedal62 out of 164,197 
 
International Business Machines Corporation
 patents

Years Active: 1998-2015

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Areas of Expertise:
Semiconductor Device Performance
Voltage Detection Circuit
Integrated Circuit Fabrication
FinFET Technology
Polysilicon Capacitor
DRAM Cell Design
Transistor Structure
ESD Protection
Optical Sensing
Stress-Induced Defects
Silicon-On-Insulator Processes
Latch-Up Prevention
62 patents (USPTO):Explore Patents
1. 9064072 - Modeling semiconductor device performance (2015-06-23),
2. 7915571 - On demand circuit function execution employing optical sensing (2011-03-29),
3. 7873921 - Structure for a voltage detection circuit in an integrated circuit and method of generating a trigger flag signal (2011-01-18),
4. 7872310 - Semiconductor structure and system for fabricating an integrated circuit chip (2011-01-18),
5. 7847605 - Voltage detection circuit in an integrated circuit and method of generating a trigger flag signal (2010-12-07),
6. 7763531 - Method and structure to process thick and thin fins and variable fin to fin spacing (2010-07-27),
7. 7659497 - On demand circuit function execution employing optical sensing (2010-02-09),
8. 7473970 - Concurrent fin-fet and thick body device fabrication (2009-01-06),
9. 7466171 - Voltage detection circuit and circuit for generating a trigger flag signal (2008-12-16),
10. 7301210 - Method and structure to process thick and thin fins and variable fin to fin spacing (2007-11-27),
11. 7297582 - Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensions (2007-11-20),
12. 7253066 - MOSFET with decoupled halo before extension (2007-08-07),
13. 7163851 - Concurrent Fin-FET and thick-body device fabrication (2007-01-16),
14. 7132325 - Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure (2006-11-07),
15. 7087499 - Integrated antifuse structure for FINFET and CMOS devices (2006-08-08),

Title: The Innovative Journey of Jeffrey Scott Brown

Introduction: Jeffrey Scott Brown, a talented inventor hailing from Middlesex, VT (US), has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Jeffrey Scott Brown holds several patents in various fields, including renewable energy, sustainable agriculture, and consumer electronics. His most recent patent focuses on a revolutionary method for harnessing solar energy in urban environments.

Career Highlights: With a career spanning over two decades, Jeffrey Scott Brown has worked for leading tech companies, research institutions, and universities. His innovative solutions have garnered recognition in the industry, earning him prestigious awards for his contributions to science and technology.

Collaborations: Throughout his career, Jeffrey Scott Brown has collaborated with top engineers, scientists, and designers to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful development and commercialization of cutting-edge technologies.

Conclusion: Jeffrey Scott Brown's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventions. His dedication to creating sustainable solutions for the future continues to inspire the next generation of inventors and entrepreneurs.

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