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For the Inventor, By the Inventor

Seongnam-si, South Korea

Jaehoon Jang

USPTO Granted Patents = 57 

 

Average Co-Inventor Count = 5.1

ph-index = 17

Forward Citations = 1,070(Granted Patents)

Forward Citations (Not Self Cited) = 1,048(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hwasung, KR (2013)
  • Gyeonggi-do, KR (2012 - 2015)
  • Seongnam-si, KR (2011 - 2022)
  • Suwon-si, KR (2024)

Company Filing History:

goldMedal56 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 27,040 
 
Samsung Display Co., Ltd.
 patents

Years Active: 2011-2024

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Areas of Expertise:
Three-Dimensional Semiconductor Memory
Nonvolatile Memory Devices
Operating Methods
Semiconductor Device Fabrication
Vertically-Integrated Memory
Ground Select Transistors
Memory Systems
Erasing Methods
Selection Transistors
Peripheral Active Patterns
Staggered Pillars
Sub-Divided Active Bars
57 patents (USPTO):Explore Patents
1. 12088751 - Hinge assembly and electronic device including the same (2024-09-10),
2. 11495615 - Three-dimensional semiconductor memory device (2022-11-08),
3. 11444094 - Three-dimensional semiconductor memory device (2022-09-13),
4. 10998330 - Semiconductor device having a peripheral active pattern and method of manufacturing the same (2021-05-04),
5. 10396093 - Three-dimensional semiconductor memory device and method of operating the same (2019-08-27),
6. 10396088 - Three-dimensional semiconductor device (2019-08-27),
7. 9917094 - Semiconductor device having staggered pillars (2018-03-13),
8. 9548123 - Operating methods of nonvolatile memory devices including a ground select transistor and first and second dummy memory cells (2017-01-17),
9. 9418911 - Three-dimensional semiconductor memory device having sidewall and interlayer molds (2016-08-16),
10. 9412450 - Three-dimensional nonvolatile memory and operating method of three-dimensional nonvolatile memory (2016-08-09),
11. 9401209 - Three-dimensional semiconductor memory device (2016-07-26),
12. 9331095 - Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors (2016-05-03),
13. 9330770 - Non-volatile memory devices, operating methods thereof and memory systems including the same (2016-05-03),
14. 9219072 - Nonvolatile memory devices having a three dimensional structure utilizing strapping of a common source region and/or a well region (2015-12-22),
15. 9202571 - Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors (2015-12-01),

Title: Jaehoon Jang: Pioneering Inventor from Seongnam-si, KR

Introduction: Jaehoon Jang is a highly regarded inventor hailing from Seongnam-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jaehoon Jang's most recent patents focus on advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we perceive transportation and safety on the roads.

Career Highlights: With over two decades of experience in the tech industry, Jaehoon Jang has held key positions in leading research institutions and tech companies, driving forward cutting-edge projects and spearheading innovation.

Collaborations: Throughout his career, Jaehoon Jang has collaborated with top engineers, researchers, and developers from around the globe, fostering a culture of creativity and excellence in all his projects.

Conclusion: Jaehoon Jang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventors, with a legacy that continues to inspire future generations of innovators.

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