The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Feb. 05, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sejun Park, Yongin-si, KR;
Jaeduk Lee, Seongnam-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Jin-Kyu Kang, Seoul, KR;
Seungwan Hong, Seongnam-si, KR;
Okcheon Hong, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor memory device includes a stack structure including electrodes and insulating layers alternately stacked on a substrate, and a vertical channel structure penetrating the stack structure. The vertical channel structure includes a semiconductor pattern and a vertical insulating layer between the semiconductor pattern and the electrodes. The vertical insulating layer includes a charge storage layer, a filling insulating layer, and a tunnel insulating layer. The vertical insulating layer has a cell region between the semiconductor pattern and each electrode and a cell separation region between the semiconductor pattern and each insulating layer. A portion of the charge storage layer of the cell region is in physical contact with the tunnel insulating layer. The filling insulating layer is between the semiconductor pattern and a remaining portion of the charge storage layer of the cell region.