The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Mar. 31, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyunmog Park, Seoul, KR;
Daewoong Kang, Seoul, KR;
Chadong Yeo, Suwon-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Joongshik Shin, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A {111} plane of a substrate having a silicon crystal structure meets a top surface of the substrate to form an interconnection line on the top surface. A first stacked structure and a second stacked structure is formed on the substrate. Each of the first and the second stacked structures includes gate electrodes stacked on the substrate. A transistor is disposed on the substrate and positioned between the first stacked structure and the second stacked structure. The transistor includes a gate electrode extending in a first direction, a source region and a drain region. The source and the drain regions are disposed at both sides of the gate electrode in a second direction crossing the first direction. The interconnection line is extended at an angle with respect to the second direction.