The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
May. 08, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sunil Shim, Seoul, KR;
Jaehun Jeong, Hwaseong-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Kihyun Kim, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); H01L 27/11519 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01);
Abstract
Nonvolatile memory devices utilize vertically-stacked strings of nonvolatile memory cells (e.g., NAND-type strings) that can be selectively coupled to common source lines within a substrate. This selective coupling may be provided by lateral ground select transistors having different threshold voltages that account for different lateral spacings between the vertically-stacked strings of nonvolatile memory cells and the common source lines.