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For the Inventor, By the Inventor

Nagaokakyo, Japan

Isao Obu

This inventor holds 56 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Murata Manufacturing Co., Ltd., Murata Manufacturingco., Ltd., Renesas Technology Corp.. Active years: 2010-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Isao Obu. Retrieved from https://idiyas.com/inventor/isao-obu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 56 

% Patents Active = 96.4

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 57(Granted Patents)

Forward Citations (Not Self Cited) = 46(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tokyo, JP (2010)
  • Kyoto-fu, JP (2016)
  • Kyoto, JP (2019 - 2023)
  • Nagaokakyo, JP (2015 - 2024)

Company Filing History:

goldMedal51 out of 13,796 
 
Murata Manufacturing Co., Ltd.
 patents
silverMedal4 out of 150 
 
Murata Manufacturingco., Ltd.
 patents
bronzeMedal1 out of 3,781 
 
Renesas Technology Corp.
 patents

Years Active: 2010-2024

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Areas of Expertise:
Bipolar Transistor
Power Amplifier
Heterojunction Bipolar Transistor
Semiconductor Device
Radio Frequency Amplifier
Amplifier Module
Protective Protrusion
Ballast Resistor
Semiconductor Chip
Transmission Unit
Power Amplification Device
Emitter Layers
56 patents (USPTO):Explore Patents
1. 11978786 - Bipolar transistor and radio-frequency power amplifier module (2024-05-07),
2. 11949003 - Semiconductor device (2024-04-02),
3. 11817356 - Semiconductor device (2023-11-14),
4. 11735541 - Semiconductor device with protective protrusion (2023-08-22),
5. 11705875 - Power amplifier module (2023-07-18),
6. 11705509 - Heterojunction bipolar transistor (2023-07-18),
7. 11658180 - Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes (2023-05-23),
8. 11631758 - Semiconductor device (2023-04-18),
9. 11626511 - Semiconductor device (2023-04-11),
10. 11621678 - Semiconductor device and power amplifier module (2023-04-04),
11. 11557664 - Heterojunction bipolar transistor including ballast resistor and semiconductor device (2023-01-17),
12. 11476807 - Power amplifier module (2022-10-18),
13. 11424350 - Heterojunction bipolar transistor (2022-08-23),
14. 11329146 - Semiconductor device (2022-05-10),
15. 11322462 - Semiconductor device (2022-05-03),

Title: The Innovative Journey of Inventor Isao Obu

Introduction: Isao Obu is a renowned inventor hailing from Nagaokakyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Isao Obu holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Isao Obu has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs in various industries.

Collaborations: Throughout his career, Isao Obu has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing to drive progress in the field of technology.

Conclusion: Isao Obu's relentless pursuit of innovation and his passion for creating solutions to complex technological challenges have solidified his reputation as a visionary inventor in the global tech community.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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