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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11978786 B1

PDFFull Text
Date of Patent:
May. 07, 2024

Filed:

Oct. 06, 2021

Bipolar transistor and radio-frequency power amplifier module

Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Isao Obu, Nagaokakyo, JP;

Yasunari Umemoto, Nagaokakyo, JP;

Masahiro Shibata, Nagaokakyo, JP;

Shigeki Koya, Nagaokakyo, JP;

Masao Kondo, Nagaokakyo, JP;

Takayuki Tsutsui, Nagaokakyo, JP;

Assignee:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 23/00 (2006.01); H01L 27/102 (2023.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H03F 1/30 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01); H03F 3/213 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/28575 (2013.01); H01L 21/30612 (2013.01); H01L 21/308 (2013.01); H01L 21/31111 (2013.01); H01L 24/00 (2013.01); H01L 29/0813 (2013.01); H01L 29/0817 (2013.01); H01L 29/0826 (2013.01); H01L 29/1004 (2013.01); H01L 29/205 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/66318 (2013.01); H03F 1/56 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/213 (2013.01); H03F 3/245 (2013.01); H01L 29/452 (2013.01); H03F 1/302 (2013.01); H03F 2200/222 (2013.01); H03F 2200/267 (2013.01); H03F 2200/318 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

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