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For the Inventor, By the Inventor

Kyoto, Japan

Takayuki Tsutsui

This inventor holds 104 USPTO granted patents and 2 published patent applications, primarily in Power Amplification (CPC class H03F2200-451). Top assignees: Murata Manufacturing Co., Ltd., Renesas Technology Corp., Hitachi, Ltd.. Active years: 1996-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takayuki Tsutsui. Retrieved from https://idiyas.com/inventor/takayuki-tsutsui

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 104 

% Patents Active = 94.2

Average Co-Inventor Count = 3.6

ph-index = 11

Forward Citations = 429(Granted Patents)

Forward Citations (Not Self Cited) = 398(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Komoro, JP (1996 - 1998)
  • Saku, JP (2003 - 2009)
  • Tokyo, JP (2010 - 2011)
  • Kanagawa, JP (2012)
  • Nagaokakyo, JP (2014 - 2024)
  • Kyoto, JP (2016 - 2024)

Company Filing History:

goldMedal76 out of 13,796 
 
Murata Manufacturing Co., Ltd.
 patents
silverMedal16 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal5 out of 42,726 
 
Hitachi, Ltd.
 patents
4. 4 out of 150 
 
Murata Manufacturingco., Ltd.
 patents
5. 3 out of 10 
 
Hitachi Hybrid Network Co., Ltd.
 patents
6. 2 out of 17 
 
Hitachi Communication Systems, Inc.
 patents
7. 2 out of 7,651 
 
Renesas Electronics Corporation
 patents
8. 1 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 1996-2025

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Areas of Expertise:
Power Amplifier
Semiconductor Device
High-Frequency Signal Processing
Radio-Frequency Amplifier
Bipolar Transistor
Power Amplification Module
Active Balun Circuit
Heterojunction Bipolar Transistor
Transmission Unit
Semiconductor Module
Power Amplification Device
Amplifier Module
104 patents (USPTO):Explore Patents
1. 12334882 - Radio-frequency amplifier circuit (2025-06-17),
2. 12308809 - Power amplification circuit (2025-05-20),
3. 12308355 - Semiconductor device and semiconductor module (2025-05-20),
4. 12177790 - High-frequency signal processing apparatus and wireless communication apparatus (2024-12-24),
5. 12063013 - Power amplifier (2024-08-13),
6. 12009359 - Semiconductor device (2024-06-11),
7. 11978786 - Bipolar transistor and radio-frequency power amplifier module (2024-05-07),
8. 11894816 - Power amplifier circuit (2024-02-06),
9. 11856525 - High-frequency signal processing apparatus and wireless communication apparatus (2023-12-26),
10. 11791782 - Power amplification module (2023-10-17),
11. 11705875 - Power amplifier module (2023-07-18),
12. 11658180 - Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes (2023-05-23),
13. 11646704 - Power amplifier circuit (2023-05-09),
14. 11626511 - Semiconductor device (2023-04-11),
15. 11611942 - High-frequency signal processing apparatus and wireless communication apparatus (2023-03-21),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I will craft an article about inventor Takayuki Tsutsui based on the provided data.

Title: The Ingenious Mind of Takayuki Tsutsui: Pioneering Semiconductor Technologies

Introduction:

Takayuki Tsutsui, a distinguished inventor hailing from Kyoto, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 99 patents under his belt, Tsutsui's innovative work has propelled advancements in the industry.

Latest Patents:

Among Tsutsui's latest patents is a groundbreaking "Semiconductor device." This invention features transistors arranged side by side on a substrate, connected in parallel, with passive elements strategically placed between the transistors. The design includes collector layers, base layers, and emitter layers, showcasing Tsutsui's prowess in semiconductor engineering. Another notable patent is the "Bipolar transistor and radio-frequency power amplifier module," demonstrating his ingenuity in optimizing compound semiconductor substrates for enhanced performance.

Career Highlights:

Tsutsui's illustrious career includes stints at reputable companies such as Murata Manufacturing Co., Ltd., and Renesas Technology Corp. His expertise and innovation have undoubtedly left an indelible mark on the semiconductor industry, shaping the landscape of technological advancements.

Collaborations:

Throughout his career, Tsutsui has collaborated with esteemed professionals in the field, including Satoshi Tanaka and Isao Obu. These partnerships have fostered a culture of innovation, leading to the development of cutting-edge semiconductor technologies.

Conclusion:

In conclusion, Takayuki Tsutsui emerges as a visionary inventor whose relentless pursuit of excellence has revolutionized semiconductor technologies. His patents and collaborations stand as a testament to his ingenuity and dedication to advancing the boundaries of technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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