Murata Manufacturing Co., Ltd.

Renesas Technology Corp.

Hitachi, Ltd.

Murata Manufacturingco., Ltd.

Hitachi Hybrid Network Co., Ltd.

Renesas Electronics Corporation

Hitachi Communication Systems, Inc.

Other

Takayuki Tsutsui

Satoshi Tanaka

Isao Obu

Yasunari Umemoto

Shigeki Koya

Kiichiro Takenaka

Masao Kondo

Taizo Yamawaki

Shun Imai

Kazuhito Nakai

Yasuhisa Yamamoto

Fuminori Morisawa

Kouichi Matsushita

Nobuhiro Matsudaira

Yusuke Tanaka

Kenji Sasaki

Tetsuaki Adachi

Masahiro Shibata

Hayato Nakamura

Masahiro Aoki

Hidenori Obiya

Masayuki Aoike

Yuichi Saito

Hiroyuki Nagamori

Atsushi Kurokawa

Masatoshi Hase

Kenichi Shimamoto

Kazuo Watanabe

Fumio Harima

Yasuhiro Nunogawa

Tomio Furuya

Tadashi Matsuoka

Yusuke Shimamune

Masahiro Tsuchiya

Atsushi Nakamura

Kazuhisa Uomi

Tatemi Ido

Makoto Okai

Hitoshi Akamine

Tomonobu Tsuchiya

Makoto Suzuki

Norio Hayashi

Kyoichi Takahashi

Shinji Yamada

Shinnosuke Takahashi

Tsuyoshi Taniwatari

Yasushi Oyama

Kenji Tahara

Satoshi Sakurai

Satoshi Arayashiki

Tomoaki Kudaishi

Eigo Tange

Kazuhiro Koshio

Takeyuki Okabe

Yasunobu Yoshizaki

Kazuhiko Ishimoto

Ikuma Ohta

Masashi Yamaura

Reiichi Arai

Takayuki Maehara

Yasutaka Nihongi

A radio-frequency amplifier circuit includes a first amplifier transistor configured to amplify and output a radio-frequency signal supplied to a base of the first amplifier transistor, a first bias transistor that is connected to the first amplifier transistor to form a current mirror and configured to supply a bias to the base of the first amplifier transistor, a second bias transistor that is connected to the base of the first amplifier transistor to form an emitter follower and configured to supply a bias to the base of the first amplifier transistor, and a first capacitor having a first end connected to the base of the first amplifier transistor and a second end connected to an emitter of the second bias transistor.

Radio-frequency amplifier circuit

A power amplification circuit includes first wiring supplied with a first signal having a first frequency, second wiring supplied with a second signal having a second frequency that differs from the first frequency, a first amplification circuit that amplifies the first signal supplied through the first wiring and supplies a first amplified signal to the second wiring, and a second amplification circuit that amplifies the signal supplied through the second wiring and outputs a second amplified signal.

Power amplification circuit

A semiconductor device includes first member that includes a switch made of a semiconductor element made from an elemental semiconductor. The first member is joined to a second member including a radio-frequency circuit including a semiconductor element made from a compound semiconductor. The switch and the radio-frequency circuit are connected by a path. The path includes an inter-member connection wire made of a metal pattern arranged on an interlayer insulating film extending from a surface of the second member to a surface of the first member or a conductive member allowing a current to flow in a direction crossing an interface where the first member and the second member are joined.

Semiconductor device and semiconductor module

A high-frequency signal processing apparatus and a wireless communication apparatus can achieve a decrease in power consumption. For example, when an indicated power level to a high-frequency power amplifier is equal to or greater than a second reference value, envelope tracking is performed by causing a source voltage control circuit to control a high-speed DCDC converter using a detection result of an envelope detecting circuit and causing a bias control circuit to indicate a fixed bias value. The source voltage control circuit and the bias control circuit indicate a source voltage and a bias value decreasing in proportion to a decrease in the indicated power level when the indicated power level is in a range of the second reference value to the first reference value, and indicate a fixed source voltage and a fixed bias value when the indicated power level is less than the first reference value.

High-frequency signal processing apparatus and wireless communication apparatus

A power amplifier comprising a first member and a second member including a compound semiconductor region joined to a first face of the first member including a semiconductor region. The second member includes an amplifier circuit including a compound semiconductor element, and multiple clamp diodes connected in multiple stages and between an output port of the amplifier circuit and ground. The first member includes a switch, connected between an extension point, which is a middle point of the multiple clamp diodes and the ground, a temperature sensor, and a switch control circuit which performs on-off control of the switch based on a result of measurement by the temperature sensor. The extension point is connected to the switch via a path including an inter-member connection wire on an interlayer insulating film from the first face of the first member to a surface of the second member.

Power amplifier

A semiconductor having transistors arranged side by side in one direction over a surface of a substrate and are connected in parallel. At least one passive element is disposed on at least one of regions between two adjacent ones of the transistors. The transistors each include a collector layer over the substrate, a base layer on the collector layer, and an emitter layer on the base layer. Collector electrodes are arranged in such a manner that each of the collector electrodes is located between the substrate and the collector layer of the corresponding one of the transistors and is electrically connected to the collector layer.

Semiconductor device

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

Bipolar transistor and radio-frequency power amplifier module

A power amplifier circuit includes a first amplifier that amplifies a first RF signal and outputs a second RF signal, a second amplifier that amplifies the second RF signal and outputs a third RF signal, a bias circuit that supplies a bias current or voltage to the first or second amplifier, and a bias adjustment circuit that adjusts the bias current or voltage on the basis of the first RF signal, the second RF signal, or the third RF signal. The bias adjustment circuit includes a first diode having an anode to which a control signal indicating a signal based on the first, second, or third RF signal is inputted, and a cathode connected to a ground. The bias circuit includes a bias transistor that outputs the bias current or voltage on the basis of a voltage at the anode of the first diode.

Power amplifier circuit

A semiconductor chip includes a plurality of transistor rows. Corresponding to the plurality of transistor rows, a first bump connected to a collector of the transistor is arranged, and a second bump connected to an emitter is arranged. The transistor rows are arranged along sides of a convex polygon. A first land and a second land provided in a circuit board are connected to the first bump and the second bump, respectively. A first impedance conversion circuit connects the first land and the signal output terminal. A plurality of transistors in the transistor row are grouped into a plurality of groups, and the first impedance conversion circuit includes a reactance element arranged for each of the groups.

Power amplification module

A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

Power amplifier module

A semiconductor device has a semiconductor substrate, and multiple first bipolar transistors on the first primary surface side of the semiconductor substrate. The first bipolar transistors have a first height between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. The semiconductor device further has at least one second bipolar transistor on the first primary surface side of the semiconductor substrate. The second bipolar transistor have a second height, greater than the first height, between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. Also, the semiconductor has a first bump stretching over the multiple first bipolar transistors and the at least one second bipolar transistor.

Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes

A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal; a second transistor that amplifies the second signal and outputs a third signal; a bias circuit that supplies a bias current to a base of the second transistor; and a bias adjustment circuit that adjusts the bias current by subjecting the first signal to detection. The bias adjustment circuit controls the bias current such that a first current extracted from the bias circuit depends on a magnitude of the first signal.

A bipolar transistor including a first collector layer, a second collector layer, a base layer, and an emitter layer is disposed on a substrate. Etching characteristics of the second collector layer are different from etching characteristics of the first collector layer and the base layer. In plan view, an edge of an interface between the first collector layer and the second collector layer is disposed inside an edge of a lower surface of the base layer, and an edge of an upper surface of the second collector layer coincides with the edge of the lower surface of the base layer or is disposed inside the edge of the lower surface of the base layer.

Growing community of inventors

Kyoto, Japan

Takayuki Tsutsui