The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Oct. 18, 2021
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Shinnosuke Takahashi, Nagaokakyo, JP;

Masayuki Aoike, Nagaokakyo, JP;

Takayuki Tsutsui, Nagaokakyo, JP;

Shigeki Koya, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 25/00 (2006.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0658 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/16 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 27/0255 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/24 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/08 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/24146 (2013.01);
Abstract

A semiconductor having transistors arranged side by side in one direction over a surface of a substrate and are connected in parallel. At least one passive element is disposed on at least one of regions between two adjacent ones of the transistors. The transistors each include a collector layer over the substrate, a base layer on the collector layer, and an emitter layer on the base layer. Collector electrodes are arranged in such a manner that each of the collector electrodes is located between the substrate and the collector layer of the corresponding one of the transistors and is electrically connected to the collector layer.


Find Patent Forward Citations

Loading…