The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Jul. 27, 2021
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Yasunari Umemoto, Nagaokakyo, JP;

Isao Obu, Nagaokakyo, JP;

Kaoru Ideno, Nagaokakyo, JP;

Shigeki Koya, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/0692 (2013.01); H01L 29/0817 (2013.01);
Abstract

A collector layer, a base layer, and an emitter layer that are disposed on a substrate form a bipolar transistor. An emitter electrode is in ohmic contact with the emitter layer. The emitter layer has a shape that is long in one direction in plan view. A difference in dimension with respect to a longitudinal direction of the emitter layer between the emitter layer and an ohmic contact interface at which the emitter layer and the emitter electrode are in ohmic contact with each other is larger than a difference in dimension with respect to a width direction of the emitter layer between the emitter layer and the ohmic contact interface.


Find Patent Forward Citations

Loading…