The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Jun. 22, 2021
Applicant:
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Inventors:
Isao Obu, Nagaokakyo, JP;
Yasunari Umemoto, Nagaokakyo, JP;
Takayuki Tsutsui, Nagaokakyo, JP;
Satoshi Tanaka, Nagaokakyo, JP;
Assignee:
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/73 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/737 (2006.01); H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7304 (2013.01); H01L 27/0823 (2013.01); H01L 29/0817 (2013.01); H01L 29/0826 (2013.01); H01L 29/205 (2013.01); H01L 29/41708 (2013.01); H01L 29/7371 (2013.01);
Abstract
A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.