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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hung-Wei Chen

USPTO Granted Patents = 31

Average Co-Inventor Count = 4.3

ph-index = 11

Forward Citations = 676(Granted Patents)


Location History:

  • Chu-Pei, TW (2013)
  • Hsin-Chu, TW (2005 - 2017)

Company Filing History:

goldMedal29 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 11 
 
Eon Silicon Solution Inc.
 patents

Years Active: 2005-2017

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31 patents (USPTO):Explore Patents
1. 9673105 - CMOS devices with Schottky source and drain regions (2017-06-06),
2. RE45944 - Structure for a multiple-gate FET device and a method for its fabrication (2016-03-21),
3. RE45180 - Structure for a multiple-gate FET device and a method for its fabrication (2014-10-06),
4. RE45165 - Structure for a multiple-gate FET device and a method for its fabrication (2014-09-29),
5. 8569837 - MOS devices having elevated source/drain regions (2013-10-29),
6. 8476156 - Manufacturing method of flash memory structure with stress area (2013-07-02),
7. 8466505 - Multi-level flash memory cell capable of fast programming (2013-06-18),
8. 8426298 - CMOS devices with Schottky source and drain regions (2013-04-23),
9. 8039284 - Dual metal silicides for lowering contact resistance (2011-10-18),
10. 8008692 - Semiconductor memory structure with stress regions (2011-08-30),
11. 7883979 - Method for manufacturing a semiconductor device with reduced floating body effect (2011-02-08),
12. 7803718 - BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture (2010-09-28),
13. 7737532 - Hybrid Schottky source-drain CMOS for high mobility and low barrier (2010-06-15),
14. 7663185 - FIN-FET device structure formed employing bulk semiconductor substrate (2010-02-16),
15. 7611938 - Semiconductor device having high drive current and method of manufacture therefor (2009-11-03),

Title: The Innovative Journey of Hung-Wei Chen: A Semiconductor Pioneer

Introduction: Hung-Wei Chen, based in Hsinchu, Taiwan, is a leading innovator in the semiconductor industry, boasting an impressive portfolio of 31 patents. His groundbreaking contributions have advanced the development of CMOS devices and multiple-gate FET technology, significantly influencing modern semiconductor design.

Latest Patents: Among his latest patents is a design for CMOS devices featuring Schottky source and drain regions. This innovative semiconductor structure integrates an NMOS device with a Schottky source/drain extension region, as well as a PMOS device constructed with non-metal materials. The patent emphasizes the reduction of Schottky barrier height in PMOS devices, which is achieved by utilizing a semiconductor layer with a low valence band. Another notable invention is a method for fabricating a semiconductor device that includes a hard mask layer and multiple openings. Through a meticulous etching process, this method creates numerous trenches that separate semiconductor mesas, leading to enhanced performance features in multiple-gate devices.

Career Highlights: Hung-Wei Chen has established himself as a key figure in the semiconductor arena, working with leading companies such as Taiwan Semiconductor Manufacturing Company Ltd. and Eon Silicon Solution Inc. His efforts in these organizations have played a critical role in the development of foundational technologies that drive the industry forward.

Collaborations: Throughout his remarkable career, Hung-Wei Chen has collaborated with talented individuals, including his coworkers Wen-Chin Lee and Chih-Hsin Ko. This collaborative spirit has fostered an environment of innovation and creativity, leading to numerous advancements in semiconductor technology.

Conclusion: Hung-Wei Chen embodies the spirit of innovation within the semiconductor industry. His extensive patent portfolio and contributions to cutting-edge technologies reflect his dedication to advancing the field. As he continues to explore new possibilities, his work promises to shape the future of semiconductor devices for years to come.

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