The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Dec. 28, 2011
Yider Wu, Chu-Pei, TW;
Hung-wei Chen, Chu-Pei, TW;
Yider Wu, Chu-Pei, TW;
Hung-Wei Chen, Chu-Pei, TW;
Eon Silicon Solution Inc., , TW;
Abstract
In a manufacturing method of a flash memory structure with a stress area, a better stress effect can be achieved by controlling the manufacturing process of a tunneling oxide layer formed in a gate structure and contacted with a silicon substrate, so that an L-shaped spacer (or a first stress area) and a contact etch stop layer (or a second stress area) of each L-shaped spacer are formed between two gate structures and aligned towards each other to enhance the carrier mobility of the gate structure, so as to achieve the effects of improving a read current, obtaining the required read current by using a lower read voltage, reducing the possibility of having a stress-induced leakage current, and enhancing the data preservation of the flash memory.