The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Mar. 10, 2005
Li-shyue Lai, Jhube, TW;
Hung-wei Chen, Hsin-Chu, TW;
Wen-chin Lee, Hsin-Chu, TW;
Min-hwa Chi, Taipei, TW;
Li-Shyue Lai, Jhube, TW;
Hung-Wei Chen, Hsin-Chu, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Min-Hwa Chi, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and a method of forming the same. The semiconductor device comprises a gate structure comprising a tunnel oxide over a substrate; a floating gate over the tunnel oxide; a dielectric over the floating gate; and a control gate over the dielectric. The semiconductor device further comprises: spacers along opposite edges of the gate structure; a first impurity region doped with a first type of dopant laterally spaced apart from a first edge of the gate structure; and a second impurity region doped with a second type of dopant, opposite from the first type, the drain being substantially under the drain spacer and substantially aligned with a second edge of the gate structure.