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For the Inventor, By the Inventor

Jhube, Taiwan

Li-Shyue Lai

This inventor holds 28 USPTO granted patents and 5 published patent applications, primarily in Memory Device Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Ritek Corporation. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li-Shyue Lai. Retrieved from https://idiyas.com/inventor/li-shyue-lai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 82.1

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 445(Granted Patents)


Location History:

  • Jhubei, TW (2006)
  • Jube, TW (2012)
  • Hsin-Chu, TW (2007 - 2016)
  • Hsinchu County, TW (2006 - 2020)
  • Jhube, TW (2005 - 2024)

Company Filing History:

goldMedal28 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 49 
 
Ritek Corporation
 patents
where one patent can have more than one assignee

Years Active: 2005-2026

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Areas of Expertise:
Vertical Field Effect Transistors
Multi-Level Flash Memory
Phase Change Memory
FinFET Devices
MRAM Arrays
Integrated Circuits
Gate Stacks
Metal Gate FinFET
Active Area Reduction
Interdigitated Capacitor
Write Line Design
Memory Cell Fabrication
28 patents (USPTO):Explore Patents
1. 12563739 - Vertical field effect transistors and methods for forming the same (2026-02-24),
2. 12176286 - Memory device and method of forming the same (2024-12-24),
3. 11984351 - Cavity in metal interconnect structure (2024-05-14),
4. 10861958 - Integrated circuits with gate stacks (2020-12-08),
5. 10283623 - Integrated circuits with gate stacks (2019-05-07),
6. 9461041 - Metal gate finFET device (2016-10-04),
7. 8921218 - Metal gate finFET device and method of fabricating thereof (2014-12-30),
8. 8466505 - Multi-level flash memory cell capable of fast programming (2013-06-18),
9. 8455321 - Multiple-gate transistors with reverse T-shaped fins (2013-06-04),
10. 8264021 - Finfets and methods for forming the same (2012-09-11),
11. 8263959 - Phase change memory device and method of manufacture thereof (2012-09-11),
12. 8153471 - Method for forming a reduced active area in a phase change memory structure (2012-04-10),
13. 8058692 - Multiple-gate transistors with reverse T-shaped fins (2011-11-15),
14. 8022382 - Phase change memory devices with reduced programming current (2011-09-20),
15. 7858980 - Reduced active area in a phase change memory structure (2010-12-28),

Title: Innovator Spotlight: Li-Shyue Lai

Introduction

Li-Shyue Lai is a prominent inventor based in Jhube, Taiwan, with an impressive portfolio of 27 patents in the field of semiconductor technology. His innovations contribute significantly to enhancing the performance and efficiency of integrated circuits, making him a key figure in the tech industry.

Latest Patents

Among his latest inventions are two notable patents:

1. **Memory Device and Method of Forming the Same** - This invention describes a memory device comprising an alternating stack of dielectric layers and word line layers, along with pairs of bit lines and source lines. The design features a staircase structure and a data storage layer that effectively manages data flow. This innovation enhances the structure's performance by reducing interference and improving data integrity.

2. **Cavity in Metal Interconnect Structure** - This integrated circuit device includes a unique dielectric structure that features a cavity within its metal interconnect. Designed to minimize parasitic capacitance, this cavity improves the performance of back-end-of-line transistors, offering a breakthrough in semiconductor design.

Career Highlights

Lai has had a distinguished career, working with notable companies such as Taiwan Semiconductor Manufacturing Company Limited and Ritek Corporation. His contributions in these organizations have solidified his reputation as an innovator committed to driving advancements in semiconductor technology.

Collaborations

Throughout his career, Li-Shyue Lai has worked alongside talented colleagues including Denny Tang and Wen-Chin Lin. These collaborations have fostered an environment of innovation, leading to the development of groundbreaking technologies in the semiconductor sector.

Conclusion

Li-Shyue Lai's dedication to innovation and his extensive patent portfolio are a testament to his impact on the semiconductor industry. His work not only advances technology but also sets the stage for future discoveries in electronic devices, proving his significance as an inventor in the modern era.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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